maximum ratings (at t =25 a o c unless otherwise noted) parameter conditions forward rectified current forward surge current reverse current thermal resistance diode junction capacitance storage temperature see fig.1 8.3ms single half sine-wave superimposed on rate load (jedec methode) f=1mhz and applied 4v dc reverse voltage symbol min. typ. max. unit i o i fsm i r r ja c j t stg a a ma o c/w o c pf 1.0 30 0.5 +175 -65 88 v = v t = 25 c r rrm j o v = v t = 100 c r rrm j o junction to ambient 120 10 low power loss, high efficiency. high current capability, l ultra high-speed switching. silicon epitaxial planar chip, metal silicon junction. lead-free parts meet environmental standards of mil-std-19500 /228 ow forward voltage drop. high surge capability. guardring for overvoltage protection. ? suffix "-h" indicates halogen-free parts, ex. MBRS120G-h. ? ? ? ? ? ? ? MBRS120G mbrs130g mbrs140g 20 30 40 14 21 28 20 30 40 -55 to +125 symbols v rrm (v) v rms v r (v) (v) *1 *2 *3 *1 repetitive peak reverse voltage *2 rms voltage *3 continuous reverse voltage *4 maximum forward voltage@i =1.0a f v f (v) *4 mbrs150g mbrs160g 50 60 35 42 50 60 0.70 0.50 -55 to +150 0.85 mbrs180g mbrs1100g 80 100 56 70 80 100 (c) o operating temperature t, j 0.196(4.9) 0.180(4.5) 0.012(0.3) typ. 0.106(2.7) 0.091(2.3) 0.068(1.7) 0.060(1.5) 0.032 (0.8) typ. 0.032(0.8) typ. mbrs1150g 150 150 105 0.92 mbrs1200g 200 200 140 MBRS120G thru mbrs1200g chip schottky barrier rectifier 1.0a surface mount schottky barrier rectifiers -20v-200v features batch process design, excellent power dissipation offers ? better reverse leakage current and thermal resistance. low profile surface mounted application in order to ? optimize board space. mechanical data ? epoxy: ul94-v0 rated frame retardant ? case: molded plastic, do-214ac / sma ? terminals: solder plated, solderable per mil-std-750, method 2026 ? polarity: lndicated by cathode band ? mounting position: any ? weight: approximated 0.05 gram sma package outline dimensions in inches and (millimeters) page 1/2 @ 2010 copyright by american first semiconductor
page 2/2 www.first-semi.com MBRS120G thru mbrs1200g 0.1 1.0 .01 10 50 rating and characteristic curves fig.1-typical forward current derating curve average for ward current ,(a) fig.4-typical junction capacitance reverse voltage,(v) junction cap acitance,(pf) instantaneous for ward current ,(a) forward voltage,(v) pulse width 300us 1% duty cycle 0.2 0.4 0.6 0.8 1.0 1.2 350 300 250 200 150 100 50 0 .01 .05 .1 .5 1 5 10 50 100 .1 .3 .5 .7 .9 1.1 1.3 1.5 3.0 .1 1.0 10 100 fig.5 - typical reverse characteristics reverse leakage current , (ma) 0 20 40 60 80 100 120 140 .01 t =75 c j mbrs150-mg~mbrs1200-mg t =25 c j t =25 c j lead temperature,( c) 0 0 20 40 60 80 100 120 140 160 180 200 fig.2-typical forward characteristics percent of rated peak reverse voltage,(%) fig.3-maximum non-repetitive forward surge current number of cycles at 60hz peak for ward surge current ,(a) t =25 c j 8.3ms single half sine wave jedec method mbrs120-mg~mbrs140-mg mbrs120-mg~mbrs140-mg mbrs150-mg~mbrs160-mg mbrs180-mg~mbrs1200-mg
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